{"id":45451,"date":"2022-12-07T03:02:00","date_gmt":"2022-12-07T03:02:00","guid":{"rendered":"https:\/\/hillmancurtis.com\/?p=45451"},"modified":"2022-12-07T03:02:19","modified_gmt":"2022-12-07T03:02:19","slug":"sqm120p10-10m1lge3","status":"publish","type":"post","link":"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/","title":{"rendered":"SQM120P10-10M1LGE3: An Automotive P-Channel MOSFET with 175\u02daC Operating Temperature"},"content":{"rendered":"<div id=\"ez-toc-container\" class=\"ez-toc-v2_0_56_1 counter-hierarchy ez-toc-counter ez-toc-grey ez-toc-container-direction\">\n<div class=\"ez-toc-title-container\">\n<p class=\"ez-toc-title \" >Table of Contents<\/p>\n<span class=\"ez-toc-title-toggle\"><a href=\"#\" class=\"ez-toc-pull-right ez-toc-btn ez-toc-btn-xs ez-toc-btn-default ez-toc-toggle\" aria-label=\"Toggle Table of Content\" role=\"button\"><label for=\"item-663b7eb81408a\" ><span class=\"\"><span style=\"display:none;\">Toggle<\/span><span class=\"ez-toc-icon-toggle-span\"><svg style=\"fill: #999;color:#999\" xmlns=\"http:\/\/www.w3.org\/2000\/svg\" class=\"list-377408\" width=\"20px\" height=\"20px\" viewBox=\"0 0 24 24\" fill=\"none\"><path d=\"M6 6H4v2h2V6zm14 0H8v2h12V6zM4 11h2v2H4v-2zm16 0H8v2h12v-2zM4 16h2v2H4v-2zm16 0H8v2h12v-2z\" fill=\"currentColor\"><\/path><\/svg><svg style=\"fill: #999;color:#999\" class=\"arrow-unsorted-368013\" xmlns=\"http:\/\/www.w3.org\/2000\/svg\" width=\"10px\" height=\"10px\" viewBox=\"0 0 24 24\" version=\"1.2\" baseProfile=\"tiny\"><path d=\"M18.2 9.3l-6.2-6.3-6.2 6.3c-.2.2-.3.4-.3.7s.1.5.3.7c.2.2.4.3.7.3h11c.3 0 .5-.1.7-.3.2-.2.3-.5.3-.7s-.1-.5-.3-.7zM5.8 14.7l6.2 6.3 6.2-6.3c.2-.2.3-.5.3-.7s-.1-.5-.3-.7c-.2-.2-.4-.3-.7-.3h-11c-.3 0-.5.1-.7.3-.2.2-.3.5-.3.7s.1.5.3.7z\"\/><\/svg><\/span><\/span><\/label><input aria-label=\"Toggle\" aria-label=\"item-663b7eb81408a\"  type=\"checkbox\" id=\"item-663b7eb81408a\"><\/a><\/span><\/div>\n<nav><ul class='ez-toc-list ez-toc-list-level-1 eztoc-toggle-hide-by-default' ><li class='ez-toc-page-1 ez-toc-heading-level-2'><a class=\"ez-toc-link ez-toc-heading-1\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#How_a_P-Channel_Works\" title=\"How a P-Channel Works\">How a P-Channel Works<\/a><\/li><li class='ez-toc-page-1 ez-toc-heading-level-2'><a class=\"ez-toc-link ez-toc-heading-2\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#The_TrenchFET%C2%AE_Power_MOSFET_Design\" title=\"The TrenchFET\u00ae Power MOSFET Design\">The TrenchFET\u00ae Power MOSFET Design<\/a><\/li><li class='ez-toc-page-1 ez-toc-heading-level-2'><a class=\"ez-toc-link ez-toc-heading-3\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#The_Role_of_the_TrenchFET%C2%AE_Power_MOSFET\" title=\"The Role of the TrenchFET\u00ae Power MOSFET\">The Role of the TrenchFET\u00ae Power MOSFET<\/a><\/li><li class='ez-toc-page-1 ez-toc-heading-level-2'><a class=\"ez-toc-link ez-toc-heading-4\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#Product_Attributes\" title=\"Product Attributes\">Product Attributes<\/a><\/li><li class='ez-toc-page-1 ez-toc-heading-level-2'><a class=\"ez-toc-link ez-toc-heading-5\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#Choosing_the_SQM120P10-10M1LGE3_P-Channel_MOSFET\" title=\"Choosing the SQM120P10-10M1LGE3 P-Channel MOSFET\">Choosing the SQM120P10-10M1LGE3 P-Channel MOSFET<\/a><ul class='ez-toc-list-level-3'><li class='ez-toc-heading-level-3'><a class=\"ez-toc-link ez-toc-heading-6\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#1_Take_Note_of_the_Types\" title=\"1.&nbsp;Take Note of the Types\">1.&nbsp;Take Note of the Types<\/a><\/li><li class='ez-toc-page-1 ez-toc-heading-level-3'><a class=\"ez-toc-link ez-toc-heading-7\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#2_Differentiate_from_the_N-Channel_MOSFETs\" title=\"2.&nbsp;Differentiate from the N-Channel MOSFETs\">2.&nbsp;Differentiate from the N-Channel MOSFETs<\/a><\/li><li class='ez-toc-page-1 ez-toc-heading-level-3'><a class=\"ez-toc-link ez-toc-heading-8\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#3_Understand_the_MOSFET_Failure_Process\" title=\"3.&nbsp;Understand the MOSFET Failure Process\">3.&nbsp;Understand the MOSFET Failure Process<\/a><ul class='ez-toc-list-level-4'><li class='ez-toc-heading-level-4'><a class=\"ez-toc-link ez-toc-heading-9\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#Fast-Paced_or_Slow-Paced_Function\" title=\"Fast-Paced or Slow-Paced Function\">Fast-Paced or Slow-Paced Function<\/a><\/li><li class='ez-toc-page-1 ez-toc-heading-level-4'><a class=\"ez-toc-link ez-toc-heading-10\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#Higher_Current_Supply_Could_also_be_a_Factor\" title=\"Higher Current Supply Could also be a Factor\">Higher Current Supply Could also be a Factor<\/a><\/li><\/ul><\/li><\/ul><\/li><li class='ez-toc-page-1 ez-toc-heading-level-2'><a class=\"ez-toc-link ez-toc-heading-11\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/#Final_Words\" title=\"Final Words\">Final Words<\/a><\/li><\/ul><\/nav><\/div>\n\n<p>MOSFETs are a type of <strong>Discreet Field Effect Transistors (FETs)<\/strong>&nbsp;used for configuring the applications or the devices that require excellent switching. For the records, MOSFETs are the ideal transistors for the applications that require minimal voltage ratings, of less than 100 volts.<\/p>\n\n\n\n<p>These applications also need to support the MOSFETs core switching capabilities of being turned on and off while carrying higher amounts of current even when the frequencies are high.<\/p>\n\n\n\n<p>Today, we will look at how SQM120P10-10M1LGE3, a single-MOSFET design with an automotive P-channel optimization works.<\/p>\n\n\n\n<div class=\"wp-block-uagb-image uagb-block-5646d512 wp-block-uagb-image--layout-default wp-block-uagb-image--effect-static wp-block-uagb-image--align-center\"><figure class=\"wp-block-uagb-image__figure\"><img decoding=\"async\" srcset=\"https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png \" src=\"https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png\" alt=\"\" class=\"uag-image-45452\" title=\"\"\/><\/figure><\/div>\n\n\n\n<h2 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"How_a_P-Channel_Works\"><\/span><strong>How a P-Channel Works<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h2>\n\n\n\n<p>A P-Channel MOSFET is the type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that is optimized to handle \u201csignificant power levels.\u201d<\/p>\n\n\n\n<div class=\"wp-block-uagb-buttons uagb-buttons__outer-wrap uagb-btn__default-btn uagb-btn-tablet__default-btn uagb-btn-mobile__default-btn uagb-block-e91a8066\"><div class=\"uagb-buttons__wrap uagb-buttons-layout-wrap\">\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-6a0add3c wp-block-button is-style-outline\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"https:\/\/hillmancurtis.com\/contact\/\" rel=\"follow noopener\" target=\"_self\"><div class=\"uagb-button__link\"><strong><strong><strong>Request PCB Manufacturing &amp; Assembly Quote Now<\/strong><\/strong><\/strong><\/div><\/a><\/div><\/div>\n<\/div><\/div>\n\n\n\n<p><strong>Learning About Electronics<\/strong>&nbsp;adds that for a P-Channel MOSFET to function effectively, it has to follow a predefined pathway. This includes the composition of the MOSFET to have a majority of the holes as current carriers.<\/p>\n\n\n\n<p>It is then through these current carriers that the majority of the current\/charge carriers (in the form of holes) will be moved through the channels. For this to work, the P-Channel MOSFET has to be activated or turned on.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"The_TrenchFET%C2%AE_Power_MOSFET_Design\"><\/span><strong>The TrenchFET\u00ae Power MOSFET Design<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h2>\n\n\n\n<p>A majority of how the SQM120P10-10M1LGE3 functions is because of the backing by the TrenchFET\u00ae Power MOSFET. In case this is your first time of hearing about it, we are going to break down the concept in the next paragraph.<\/p>\n\n\n\n<p>First, what is a Power MOSFET? According to Wikipedia, a Power MOSFET, is a type of MOSFET used primarily for maintaining a specific, significant power level in the target applications.<\/p>\n\n\n\n<p>For maximum performance, the Power MOSFET is easy to drive because of the isolated gate it shares with the Insulated-Gate Bipolar Transistor (IGBP).<\/p>\n\n\n\n<p>At the core of the Power MOSFET\u2019s functionality is the innovations that came from the CMOS and the MOSFET technologies. These innovations did not only pave the way for the Power MOSFETs like TrenchFET\u00ae Power MOSFET to be used with power-centric applications, but also allowed for the latter to have one of the highest switching speeds.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"The_Role_of_the_TrenchFET%C2%AE_Power_MOSFET\"><\/span><strong>The Role of the TrenchFET\u00ae Power MOSFET<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h2>\n\n\n\n<div class=\"wp-block-uagb-image uagb-block-02a24bfa wp-block-uagb-image--layout-default wp-block-uagb-image--effect-static wp-block-uagb-image--align-center\"><figure class=\"wp-block-uagb-image__figure\"><a class=\"\" href=\"https:\/\/www.raypcb.com\/\" target=\"\" rel=\"noopener\"><img decoding=\"async\" srcset=\"https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/11\/FULL-PCB-MANUFACTURING-1-2.jpg \" src=\"https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/11\/FULL-PCB-MANUFACTURING-1-2.jpg\" alt=\"\" class=\"uag-image-26497\" title=\"\"\/><\/a><\/figure><\/div>\n\n\n\n<p>The TrenchFET\u00ae Power MOSFET is the core architecture that does not only power a majority of SQM120P10-10M1LGE3\u2019s functions, but also paved the way for the use in multiple applications.<\/p>\n\n\n\n<p>So, what does it do? The TrenchFET\u00ae Power MOSFET is a type of MOSFET that offers a combination of gate charge and on-resistance ratings down to 4.5VV<sub>GS<\/sub>.<\/p>\n\n\n\n<div class=\"wp-block-uagb-buttons uagb-buttons__outer-wrap uagb-btn__default-btn uagb-btn-tablet__default-btn uagb-btn-mobile__default-btn uagb-block-5e1f1046\"><div class=\"uagb-buttons__wrap uagb-buttons-layout-wrap\">\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-b959ba58 wp-block-button is-style-outline\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"https:\/\/hillmancurtis.com\/contact\/\" rel=\"follow noopener\" target=\"_self\"><div class=\"uagb-button__link\"><strong><strong><strong>Request PCB Manufacturing &amp; Assembly Quote Now<\/strong><\/strong><\/strong><\/div><\/a><\/div><\/div>\n<\/div><\/div>\n\n\n\n<p>It is an excellent rating because it helps the SQM120P10-10M1LGE3 to attain the key Figure of Merit (FOM) that allows for the use in the Direct Current to Direct Current (DC-to-DC) power conversion applications.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"Product_Attributes\"><\/span><strong>Product Attributes<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h2>\n\n\n\n<p>Below are some of the attributes or the features making up the SQM120P10-10M1LGE3 P-Channel MOSFET:<\/p>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td><strong>Attributes<\/strong><strong><\/strong><\/td><td><strong>Descriptions<\/strong><strong><\/strong><\/td><\/tr><tr><td>Operating Temperature<\/td><td>Between -55\u02daC and +175\u02daC<\/td><\/tr><tr><td>Type of FET<\/td><td>P-Channel<\/td><\/tr><tr><td>Maximum Vgs<\/td><td>\u00b120V<\/td><\/tr><tr><td>Technology Used<\/td><td>MOSFET<\/td><\/tr><tr><td>Power Dissipation Capabilities<\/td><td>375W (Tc)<\/td><\/tr><tr><td>Drain to Source Voltage (Vdss)<\/td><td>100 Volts<\/td><\/tr><tr><td>Input Capacitance (Ciss) (Max) @ Vds<\/td><td>9000 pF @ 25 V<\/td><\/tr><tr><td>Drain Voltage (Max Rds On, Min Rds On)<\/td><td>4.5 Volts and 10 Volts<\/td><\/tr><tr><td>Current \u2013 Continuous Drain (Id) @ 25\u02daC<\/td><td>120A (Tc)<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"Choosing_the_SQM120P10-10M1LGE3_P-Channel_MOSFET\"><\/span><strong>Choosing the SQM120P10-10M1LGE3 P-Channel MOSFET<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h2>\n\n\n\n<p>If you are to buy SQM120P10-10M1LGE3 today, here are some of the things to prioritize before adding it to your cart:<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"1_Take_Note_of_the_Types\"><\/span><strong>1.&nbsp;<\/strong><strong>Take Note of the Types<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h3>\n\n\n\n<p>There are two major types of the P-Channel MOSFETs and not knowing how they work could make it difficult for you to make a buying decision.<\/p>\n\n\n\n<div class=\"wp-block-uagb-buttons uagb-buttons__outer-wrap uagb-btn__default-btn uagb-btn-tablet__default-btn uagb-btn-mobile__default-btn uagb-block-41d82d6d\"><div class=\"uagb-buttons__wrap uagb-buttons-layout-wrap\">\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-f5a014d5 wp-block-button is-style-outline\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"https:\/\/hillmancurtis.com\/contact\/\" rel=\"follow noopener\" target=\"_self\"><div class=\"uagb-button__link\"><strong><strong><strong>Request PCB Manufacturing &amp; Assembly Quote Now<\/strong><\/strong><\/strong><\/div><\/a><\/div><\/div>\n<\/div><\/div>\n\n\n\n<p>These two variants are the P-Channel Enhancement MOSFET and the P-Channel Depletion MOSFET. While the latter (Depletion) works by getting reversed to an N-Channel Depletion MOSFET, the former (Enhancement) uses a lightly doped n-substrate.<\/p>\n\n\n\n<p>The advantages to either of them is that the Depletion MOSFET helps the device to start conducting once the drain is reverse-biased. On the other hand, the Enhancement MOSFET works by use two (2) P-type materials with heavily doped design to make a separation through the channel. The separation makes the P-type materials to take an \u201cL\u201d length.<\/p>\n\n\n\n<p>One unique thing about these materials is how they are used to further the MOSFET\u2019s functions. For example, the P-type materials used here are used to form both the Drain (D) and the Source (S).<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"2_Differentiate_from_the_N-Channel_MOSFETs\"><\/span><strong>2.&nbsp;<\/strong><strong>Differentiate from the N-Channel MOSFETs<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h3>\n\n\n\n<div class=\"wp-block-uagb-image uagb-block-0904e087 wp-block-uagb-image--layout-default wp-block-uagb-image--effect-static wp-block-uagb-image--align-center\"><figure class=\"wp-block-uagb-image__figure\"><img decoding=\"async\" srcset=\"https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/1670381924202.png \" src=\"https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/1670381924202.png\" alt=\"\" class=\"uag-image-45453\" title=\"\"\/><\/figure><\/div>\n\n\n\n<p>The P-Channel and the N-Channel MOSFETs are two different kinds of MOSFETs and are not to be interchanged.<\/p>\n\n\n\n<p>The major difference between the two is that the P-Channel MOSFETs\u2019 current carriers are majorly made up of holes, unlike the predominance of electrons in that of the N-Channel MOSFETs.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"3_Understand_the_MOSFET_Failure_Process\"><\/span><strong>3.&nbsp;<\/strong><strong>Understand the MOSFET Failure Process<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h3>\n\n\n\n<p>While it is expedient of the P-Channel MOSFETs like SQM120P10-10M1LGE3 to be fully-operational, there is also a chance that they can underperform.<\/p>\n\n\n\n<p>The underperformance mostly stems from the \u201cfailure modes\u201d and that is what you want to take cognizance of. By failure modes, we mean some of the factors that could make the SQM120P10-10M1LGE3 to either be unfunctional or perform above the predefined ratings.<\/p>\n\n\n\n<p>Here are some contributing factors to that end:<\/p>\n\n\n\n<h4 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"Fast-Paced_or_Slow-Paced_Function\"><\/span><strong><em><strong><em>Fast-Paced or Slow-Paced Function<\/em><\/strong><\/em><\/strong><strong><em><strong><em><\/em><\/strong><\/em><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h4>\n\n\n\n<p>When the SQM120P10-10M1LGE3 is subject to fast-paced (acceleration) or slow-paced speeds (deceleration) of operation, it could negatively impact the predefined ratings.<\/p>\n\n\n\n<div class=\"wp-block-uagb-buttons uagb-buttons__outer-wrap uagb-btn__default-btn uagb-btn-tablet__default-btn uagb-btn-mobile__default-btn uagb-block-c5975b73\"><div class=\"uagb-buttons__wrap uagb-buttons-layout-wrap\">\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-da1fb326 wp-block-button is-style-outline\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"https:\/\/hillmancurtis.com\/contact\/\" rel=\"follow noopener\" target=\"_self\"><div class=\"uagb-button__link\"><strong><strong><strong>Request PCB Manufacturing &amp; Assembly Quote Now<\/strong><\/strong><\/strong><\/div><\/a><\/div><\/div>\n<\/div><\/div>\n\n\n\n<p>It is therefore, better to use this P-Channel MOSFET within the ambient of the recommended rating.<\/p>\n\n\n\n<h4 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"Higher_Current_Supply_Could_also_be_a_Factor\"><\/span><strong><em><strong><em>Higher Current Supply Could also be a Factor<\/em><\/strong><\/em><\/strong><strong><em><strong><em><\/em><\/strong><\/em><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h4>\n\n\n\n<p>A P-Channel MOSFET is said to be underperforming or susceptible to the failure modes because of the excessive power supply.<\/p>\n\n\n\n<p>The supply of excess power or higher currents throughout the SQM120P10-10M1LGE3 P-Channel MOSFET could make it to go above the predefined ratings.<\/p>\n\n\n\n<p>Besides, the MOSFET could be exposed to higher or extreme temperatures when it gets exposed to poor heat sinking.<\/p>\n\n\n\n<p>The other avalanches of factors that could make the SQM120P10-10M1LGE3 P-Channel MOSFET less functional are:<\/p>\n\n\n\n<ul><li>The introduction of foreign objects into the MOSFET.<\/li><li>Avalanche failure<\/li><li>Excess current and power dissipation<\/li><li>dV\/dt failure<\/li><li>A faulty <a href=\"https:\/\/hillmancurtis.com\/pcb-battery\/\">battery<\/a><\/li><li>Load with short-circuit<\/li><\/ul>\n\n\n\n<h2 class=\"wp-block-heading\"><span class=\"ez-toc-section\" id=\"Final_Words\"><\/span><strong>Final Words<\/strong><strong><\/strong><span class=\"ez-toc-section-end\"><\/span><\/h2>\n\n\n\n<p>SQM120P10-10M1LGE3 may be subject to some design challenges, but it offers a higher operating temperature and an avalanche of other features like the low-thermal resistance and -100 V<sub>DS<\/sub>&nbsp;(V). These factors combine to make it one of the best P-Channel MOSFETs you can find out there.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>MOSFETs are a type of Discreet Field Effect Transistors (FETs)&nbsp;used for configuring the applications or the devices that require excellent switching. For the records, MOSFETs are the ideal transistors for the applications that require minimal voltage ratings, of less than 100 volts. These applications also need to support the MOSFETs core switching capabilities of being &hellip;<\/p>\n<p class=\"read-more\"> <a class=\"\" href=\"https:\/\/hillmancurtis.com\/sqm120p10-10m1lge3\/\"> <span class=\"screen-reader-text\">SQM120P10-10M1LGE3: An Automotive P-Channel MOSFET with 175\u02daC Operating Temperature<\/span> Read More &raquo;<\/a><\/p>\n","protected":false},"author":3,"featured_media":45452,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"default","ast-global-header-display":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":null,"ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":null,"stick-header-meta":null,"header-above-stick-meta":null,"header-main-stick-meta":null,"header-below-stick-meta":null,"footnotes":""},"categories":[13],"tags":[],"acf":[],"jetpack_featured_media_url":"https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png","uagb_featured_image_src":{"full":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png",307,226,false],"thumbnail":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35-150x150.png",150,150,true],"medium":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35-300x221.png",300,221,true],"medium_large":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png",307,226,false],"large":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png",307,226,false],"1536x1536":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png",307,226,false],"2048x2048":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png",307,226,false],"woocommerce_thumbnail":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png",300,221,false],"woocommerce_single":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35.png",307,226,false],"woocommerce_gallery_thumbnail":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35-100x100.png",100,100,true],"yarpp-thumbnail":["https:\/\/hillmancurtis.com\/wp-content\/uploads\/2022\/12\/canvas-35-120x120.png",120,120,true]},"uagb_author_info":{"display_name":"Judy","author_link":"https:\/\/hillmancurtis.com\/author\/judy\/"},"uagb_comment_info":0,"uagb_excerpt":"MOSFETs are a type of Discreet Field Effect Transistors (FETs)&nbsp;used for configuring the applications or the devices that require excellent switching. For the records, MOSFETs are the ideal transistors for the applications that require minimal voltage ratings, of less than 100 volts. These applications also need to support the MOSFETs core switching capabilities of being&hellip;","_links":{"self":[{"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/posts\/45451"}],"collection":[{"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/comments?post=45451"}],"version-history":[{"count":3,"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/posts\/45451\/revisions"}],"predecessor-version":[{"id":45459,"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/posts\/45451\/revisions\/45459"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/media\/45452"}],"wp:attachment":[{"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/media?parent=45451"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/categories?post=45451"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/hillmancurtis.com\/wp-json\/wp\/v2\/tags?post=45451"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}