SQM120P10-10M1LGE3: An Automotive P-Channel MOSFET with 175˚C Operating Temperature

MOSFETs are a type of Discreet Field Effect Transistors (FETs) used for configuring the applications or the devices that require excellent switching. For the records, MOSFETs are the ideal transistors for the applications that require minimal voltage ratings, of less than 100 volts.

These applications also need to support the MOSFETs core switching capabilities of being turned on and off while carrying higher amounts of current even when the frequencies are high.

Today, we will look at how SQM120P10-10M1LGE3, a single-MOSFET design with an automotive P-channel optimization works.

How a P-Channel Works

A P-Channel MOSFET is the type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that is optimized to handle “significant power levels.”

Learning About Electronics adds that for a P-Channel MOSFET to function effectively, it has to follow a predefined pathway. This includes the composition of the MOSFET to have a majority of the holes as current carriers.

It is then through these current carriers that the majority of the current/charge carriers (in the form of holes) will be moved through the channels. For this to work, the P-Channel MOSFET has to be activated or turned on.

The TrenchFET® Power MOSFET Design

A majority of how the SQM120P10-10M1LGE3 functions is because of the backing by the TrenchFET® Power MOSFET. In case this is your first time of hearing about it, we are going to break down the concept in the next paragraph.

First, what is a Power MOSFET? According to Wikipedia, a Power MOSFET, is a type of MOSFET used primarily for maintaining a specific, significant power level in the target applications.

For maximum performance, the Power MOSFET is easy to drive because of the isolated gate it shares with the Insulated-Gate Bipolar Transistor (IGBP).

At the core of the Power MOSFET’s functionality is the innovations that came from the CMOS and the MOSFET technologies. These innovations did not only pave the way for the Power MOSFETs like TrenchFET® Power MOSFET to be used with power-centric applications, but also allowed for the latter to have one of the highest switching speeds.

The Role of the TrenchFET® Power MOSFET

The TrenchFET® Power MOSFET is the core architecture that does not only power a majority of SQM120P10-10M1LGE3’s functions, but also paved the way for the use in multiple applications.

So, what does it do? The TrenchFET® Power MOSFET is a type of MOSFET that offers a combination of gate charge and on-resistance ratings down to 4.5VVGS.

It is an excellent rating because it helps the SQM120P10-10M1LGE3 to attain the key Figure of Merit (FOM) that allows for the use in the Direct Current to Direct Current (DC-to-DC) power conversion applications.

Product Attributes

Below are some of the attributes or the features making up the SQM120P10-10M1LGE3 P-Channel MOSFET:

AttributesDescriptions
Operating TemperatureBetween -55˚C and +175˚C
Type of FETP-Channel
Maximum Vgs±20V
Technology UsedMOSFET
Power Dissipation Capabilities375W (Tc)
Drain to Source Voltage (Vdss)100 Volts
Input Capacitance (Ciss) (Max) @ Vds9000 pF @ 25 V
Drain Voltage (Max Rds On, Min Rds On)4.5 Volts and 10 Volts
Current – Continuous Drain (Id) @ 25˚C120A (Tc)

Choosing the SQM120P10-10M1LGE3 P-Channel MOSFET

If you are to buy SQM120P10-10M1LGE3 today, here are some of the things to prioritize before adding it to your cart:

1. Take Note of the Types

There are two major types of the P-Channel MOSFETs and not knowing how they work could make it difficult for you to make a buying decision.

These two variants are the P-Channel Enhancement MOSFET and the P-Channel Depletion MOSFET. While the latter (Depletion) works by getting reversed to an N-Channel Depletion MOSFET, the former (Enhancement) uses a lightly doped n-substrate.

The advantages to either of them is that the Depletion MOSFET helps the device to start conducting once the drain is reverse-biased. On the other hand, the Enhancement MOSFET works by use two (2) P-type materials with heavily doped design to make a separation through the channel. The separation makes the P-type materials to take an “L” length.

One unique thing about these materials is how they are used to further the MOSFET’s functions. For example, the P-type materials used here are used to form both the Drain (D) and the Source (S).

2. Differentiate from the N-Channel MOSFETs

The P-Channel and the N-Channel MOSFETs are two different kinds of MOSFETs and are not to be interchanged.

The major difference between the two is that the P-Channel MOSFETs’ current carriers are majorly made up of holes, unlike the predominance of electrons in that of the N-Channel MOSFETs.

3. Understand the MOSFET Failure Process

While it is expedient of the P-Channel MOSFETs like SQM120P10-10M1LGE3 to be fully-operational, there is also a chance that they can underperform.

The underperformance mostly stems from the “failure modes” and that is what you want to take cognizance of. By failure modes, we mean some of the factors that could make the SQM120P10-10M1LGE3 to either be unfunctional or perform above the predefined ratings.

Here are some contributing factors to that end:

Fast-Paced or Slow-Paced Function

When the SQM120P10-10M1LGE3 is subject to fast-paced (acceleration) or slow-paced speeds (deceleration) of operation, it could negatively impact the predefined ratings.

It is therefore, better to use this P-Channel MOSFET within the ambient of the recommended rating.

Higher Current Supply Could also be a Factor

A P-Channel MOSFET is said to be underperforming or susceptible to the failure modes because of the excessive power supply.

The supply of excess power or higher currents throughout the SQM120P10-10M1LGE3 P-Channel MOSFET could make it to go above the predefined ratings.

Besides, the MOSFET could be exposed to higher or extreme temperatures when it gets exposed to poor heat sinking.

The other avalanches of factors that could make the SQM120P10-10M1LGE3 P-Channel MOSFET less functional are:

  • The introduction of foreign objects into the MOSFET.
  • Avalanche failure
  • Excess current and power dissipation
  • dV/dt failure
  • A faulty battery
  • Load with short-circuit

Final Words

SQM120P10-10M1LGE3 may be subject to some design challenges, but it offers a higher operating temperature and an avalanche of other features like the low-thermal resistance and -100 VDS (V). These factors combine to make it one of the best P-Channel MOSFETs you can find out there.